Solid State Electronics - ELEC4603

   
   
   
 
Campus: Kensington Campus
 
 
Career: Undergraduate
 
 
Units of Credit: 6
 
 
EFTSL: 0.12500 (more info)
 
 
Indicative Contact Hours per Week: 4
 
 
Enrolment Requirements:
 
 
Prereq: ELEC2133
 
 
Equivalent: ELEC3016
 
 
CSS Contribution Charge:Band 2 (more info)
 
   
 
Further Information: See Class Timetable
 
 

Description


Band-structure and doping of semiconductors. Drift-Diffusion Equations; Density of states; Fermi function; Law of Mass Action. PN Junctions: Derivation of I-V characteristics. PN Junctions: Capacitance; Breakdown; Non-idealities. Bipolar Junction Transistor (BJT): Operation principles. BJT: Derivation of I-V characteristics. BJT: Ebers-Moll model; Non-idealities. MOSFET: Derivation of I-V characteristics. MOSFET: Structure; Threshold Voltage; Enhancement- & Depletion-mode. Microwave devices. Transistors for Digital Logic: TTL, ECL, CMOS. Optoelectronic & Photonic Devices: Direct Vs Indirect Band-gap devices. LEDs; Semiconductor Lasers; Photovoltaic Cells. Principles and key technologies involved in microfabrication of integrated circuits. Microfabrication of: MOSFETs; CMOS; BJTs.